An analysis of illuminated HEMT MMIC using Simulation.

Analysis of Algan/gan Based Hemt Device for Mmic Design

In this paper AlGaN/GaN heterostructure device analysis carried out which are capable for high power and frequency with performances far superior to those offered by the mainstream silicon technology and other advanced semiconductor technologies. AlGaN/GaN HEMT primarily driven by microwave wireless communication applications need. The last few years have witnessed major effort in the developme...

GaN HEMT and MMIC Design and Evaluation

High-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers

High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...

Current Model for short Channel Illuminated Gallium Nitride HEMT

Microwave power transistors play key role in today‟s wireless communication, necessary for virtually all major aspects of human activities from entertainment, business to military. HEMT is widely used due to its high speed and power amplification capabilities. The paper proposes a current Model for short channel HEMT to evaluate its sensitivity to illumination to find its application in optical...

analysis of ruin probability for insurance companies using markov chain

در این پایان نامه نشان داده ایم که چگونه می توان مدل ریسک بیمه ای اسپیرر اندرسون را به کمک زنجیره های مارکوف تعریف کرد. سپس به کمک روش های آنالیز ماتریسی احتمال برشکستگی ، میزان مازاد در هنگام برشکستگی و میزان کسری بودجه در زمان وقوع برشکستگی را محاسبه کرده ایم. هدف ما در این پایان نامه بسیار محاسباتی و کاربردی تر از روش های است که در گذشته برای محاسبه این احتمال ارائه شده است. در ابتدا ما نشا...